HYDROGEN SENSOR BASED ON A PT/GAAS SCHOTTKY DIODE

被引：44
作者：
LECHUGA, LM
CALLE, A
GOLMAYO, D
BRIONES, F
机构：
[1] Centro Nacional de Microelectrónica (CSIC), 28006 Madrid, Serrano
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 1991年 / 4卷 / 3-4期
关键词：
D O I：
10.1016/0925-4005(91)80161-C
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
A new sensitive hydrogen detector based on a Pt/GaAs Schottky barrier diode has been fabricated. When the device is implemented with an organic layer (polyetherimide), the diode sensitivity increases. The effects of temperature, hydrogen concentration and ambient atmosphere on the device responses are examined.
引用
收藏
页码：515 / 518
页数：4
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