RATE OF FORMATION OF A-CENTERS IN SILICON SUBJECTED TO PULSED ELECTRON-BOMBARDMENT

被引：0

作者：

ABDUSATTAROV, AG

EMTSEV, VV

LOMASOV, VN

MASHOVETS, TV

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 01期

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D O I：

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：101 / 102

页数：2

共 18 条

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[10]

MACKAY JW, 1963, 1962 P INT S RAD DAM, V3, P27

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