共 50 条
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- [22] ENERGY-LEVELS IN IDEAL AND RECONSTRUCTED MODELS OF A SILICON VACANCY JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (31): : 4603 - 4609
- [27] POSITIONS OF ENERGY-LEVELS OF ION-IMPLANTED IMPURITIES IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1340 - 1341
- [28] ENERGY-LEVELS OF INTRINSIC AND EXTRINSIC STACKING-FAULTS IN SILICON PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 108 (01): : 97 - 102
- [29] ENERGY-LEVELS OF PHOSPHORUS AND BORON PAIRS IN AMORPHOUS-SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1335 - 1336