LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：0

作者：

BURNHAM, RD ^{[1
]}

SCIFRES, DR ^{[1
]}

STREIFER, W ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 10期

关键词：

D O I：

10.1109/T-ED.1982.20957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1674 / 1674

页数：1

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