DEPTH PROFILING OF OXYGEN CONCENTRATION OF INDIUM TIN OXIDE-FILMS FABRICATED BY REACTIVE SPUTTERING

被引：14
作者：
HONDA, S
TSUJIMOTO, A
WATAMORI, M
OURA, K
机构：
[1] Department of Electronic Engineering, Osaka University, Suita, Osaka, 565
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 9A期
关键词：
ITO; OXYGEN DEPTH PROFILE; HC-PDS; ELECTRICAL PROPERTIES; OXYGEN DEFICIENCY;
D O I：
10.1143/JJAP.33.L1257
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Depth profiling of the oxygen concentration of indium tin oxide (ITO) films on glass substrates has been investigated using a high-energy ion beam. Hot-cathode Penning-discharge sputtering (HC-PDS) in the mixed gases of argon and oxygen was applied to fabricate the films. It is found that there is a correlation between the depth profile of oxygen concentration and the electrical properties. The effect of partial pressures of oxygen gas on the depth profile of the oxygen concentration and on electrical properties is discussed.
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收藏
页码：L1257 / L1260
页数：4
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