ELECTRON AND HOLE STATES IN ULTRATHIN QUANTUM-WELLS

被引：1
|
作者：
YASSIEVICH, I [1 ]
ROSSLER, U [1 ]
机构：
[1] UNIV REGENSBURG,INST THEORET PHYS,D-93040 REGENSBURG,GERMANY
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1994年 / 6卷 / 39期
关键词：
D O I：
10.1088/0953-8984/6/39/013
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Ultrathin quantum wells in semiconductor structures represent a short range perturbation in the barrier material. In order to describe bound electronic states in such systems we adopt the concept of the zero-radius potential model, developed earlier in nuclear physics by Bethe and Peierls. Our one-dimensional version of this phenomenological model is applied to electrons. donors and holes.
引用
收藏
页码：7927 / 7934
页数：8
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