PEIERLS-NABARRO MODEL OF DISLOCATIONS IN SILICON WITH GENERALIZED STACKING-FAULT RESTORING FORCES

被引：242

作者：

JOOS, B ^{[1
]}

REN, Q ^{[1
]}

DUESBERY, MS ^{[1
]}

机构：

[1] FAIRFAX MAT RES INC,ALEXANDRIA,VA 22310

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.50.5890

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using generalized stacking-fault (gsf) energies obtained from first-principles. density-functional calculations, a zero-temperature model for dislocations in silicon is constructed within the framework of a Peierls-Nabarro (PN) model. Core widths, core energies, PN pinning energies, and stresses are calculated for various possible perfect and imperfect dislocations. Both shuffle and glide sets are considered. 90-degrees partials are shown to have a lower Peierls stress than the 30-degrees partials in accord with experiment.

引用

页码：5890 / 5898

页数：9

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