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KINK EFFECT ON THE BASE CURRENT OF HETEROJUNCTION BIPOLAR-TRANSISTORS
被引:2
作者
:
LIOU, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Solid State Electronics Directorate Wright Laboratory Wright-Patterson Air Force Base OH
LIOU, JJ
LIOU, LL
论文数:
0
引用数:
0
h-index:
0
机构:
Solid State Electronics Directorate Wright Laboratory Wright-Patterson Air Force Base OH
LIOU, LL
HUANG, CI
论文数:
0
引用数:
0
h-index:
0
机构:
Solid State Electronics Directorate Wright Laboratory Wright-Patterson Air Force Base OH
HUANG, CI
机构
:
[1]
Solid State Electronics Directorate Wright Laboratory Wright-Patterson Air Force Base OH
来源
:
SOLID-STATE ELECTRONICS
|
1993年
/ 36卷
/ 08期
关键词
:
D O I
:
10.1016/0038-1101(93)90205-5
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
[No abstract available]
引用
收藏
页码:1222 / 1224
页数:3
相关论文
共 8 条
[1]
HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS
[J].
BOWLER, DL
论文数:
0
引用数:
0
h-index:
0
机构:
SWARTHMORE COLL, DEPT ENGN, SWARTHMORE, PA 19081 USA
BOWLER, DL
;
LINDHOLM, FA
论文数:
0
引用数:
0
h-index:
0
机构:
SWARTHMORE COLL, DEPT ENGN, SWARTHMORE, PA 19081 USA
LINDHOLM, FA
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
:257
-263
[2]
CARBON-DOPED BASE ALGAAS GAAS HBTS GROWN BY MOCVD USING TMAS
[J].
ITO, H
论文数:
0
引用数:
0
h-index:
0
ITO, H
;
KOBAYASHI, T
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, T
;
ISHIBASHI, T
论文数:
0
引用数:
0
h-index:
0
ISHIBASHI, T
.
ELECTRONICS LETTERS,
1989,
25
(19)
:1302
-1303
[3]
BASE-COLLECTOR JUNCTION CAPACITANCE OF BIPOLAR-TRANSISTORS OPERATING AT HIGH-CURRENT DENSITIES
[J].
LIOU, JJ
论文数:
0
引用数:
0
h-index:
0
LIOU, JJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(11)
:2304
-2308
[4]
MODELING THE CUTOFF FREQUENCY OF SINGLE-HETEROJUNCTION BIPOLAR-TRANSISTORS SUBJECTED TO HIGH COLLECTOR-LAYER CURRENT
[J].
LIOU, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
LIOU, JJ
;
LINDHOLM, FA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
LINDHOLM, FA
;
WU, BS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
WU, BS
.
JOURNAL OF APPLIED PHYSICS,
1990,
67
(11)
:7125
-7131
[5]
LIOU JJ, 1992, IN PRESS IEEE T ELEC
[6]
USING CONSTANT BASE CURRENT AS A BOUNDARY-CONDITION FOR ONE-DIMENSIONAL ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR SIMULATION
[J].
LIOU, LL
论文数:
0
引用数:
0
h-index:
0
机构:
Electronic Technology Laboratory, Wright Research and Development Center, Wright Patterson Air Force Base
LIOU, LL
;
HUANG, CI
论文数:
0
引用数:
0
h-index:
0
机构:
Electronic Technology Laboratory, Wright Research and Development Center, Wright Patterson Air Force Base
HUANG, CI
.
ELECTRONICS LETTERS,
1990,
26
(18)
:1501
-1503
[7]
SZE SM, 1981, PHYSICS SEMICONDUCTO
[8]
A NEW EFFECT AT HIGH CURRENTS IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS
[J].
TIWARI, S
论文数:
0
引用数:
0
h-index:
0
TIWARI, S
.
IEEE ELECTRON DEVICE LETTERS,
1988,
9
(03)
:142
-144
←
1
→
共 8 条
[1]
HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS
[J].
BOWLER, DL
论文数:
0
引用数:
0
h-index:
0
机构:
SWARTHMORE COLL, DEPT ENGN, SWARTHMORE, PA 19081 USA
BOWLER, DL
;
LINDHOLM, FA
论文数:
0
引用数:
0
h-index:
0
机构:
SWARTHMORE COLL, DEPT ENGN, SWARTHMORE, PA 19081 USA
LINDHOLM, FA
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
:257
-263
[2]
CARBON-DOPED BASE ALGAAS GAAS HBTS GROWN BY MOCVD USING TMAS
[J].
ITO, H
论文数:
0
引用数:
0
h-index:
0
ITO, H
;
KOBAYASHI, T
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, T
;
ISHIBASHI, T
论文数:
0
引用数:
0
h-index:
0
ISHIBASHI, T
.
ELECTRONICS LETTERS,
1989,
25
(19)
:1302
-1303
[3]
BASE-COLLECTOR JUNCTION CAPACITANCE OF BIPOLAR-TRANSISTORS OPERATING AT HIGH-CURRENT DENSITIES
[J].
LIOU, JJ
论文数:
0
引用数:
0
h-index:
0
LIOU, JJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(11)
:2304
-2308
[4]
MODELING THE CUTOFF FREQUENCY OF SINGLE-HETEROJUNCTION BIPOLAR-TRANSISTORS SUBJECTED TO HIGH COLLECTOR-LAYER CURRENT
[J].
LIOU, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
LIOU, JJ
;
LINDHOLM, FA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
LINDHOLM, FA
;
WU, BS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA
WU, BS
.
JOURNAL OF APPLIED PHYSICS,
1990,
67
(11)
:7125
-7131
[5]
LIOU JJ, 1992, IN PRESS IEEE T ELEC
[6]
USING CONSTANT BASE CURRENT AS A BOUNDARY-CONDITION FOR ONE-DIMENSIONAL ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR SIMULATION
[J].
LIOU, LL
论文数:
0
引用数:
0
h-index:
0
机构:
Electronic Technology Laboratory, Wright Research and Development Center, Wright Patterson Air Force Base
LIOU, LL
;
HUANG, CI
论文数:
0
引用数:
0
h-index:
0
机构:
Electronic Technology Laboratory, Wright Research and Development Center, Wright Patterson Air Force Base
HUANG, CI
.
ELECTRONICS LETTERS,
1990,
26
(18)
:1501
-1503
[7]
SZE SM, 1981, PHYSICS SEMICONDUCTO
[8]
A NEW EFFECT AT HIGH CURRENTS IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS
[J].
TIWARI, S
论文数:
0
引用数:
0
h-index:
0
TIWARI, S
.
IEEE ELECTRON DEVICE LETTERS,
1988,
9
(03)
:142
-144
←
1
→