PROGRESS IN EPITAXIAL-GROWTH OF SIC

被引：52
作者：
MATSUNAMI, H
机构：
[1] Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto
来源：
PHYSICA B | 1993年 / 185卷 / 1-4期
关键词：
D O I：
10.1016/0921-4526(93)90215-R
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Recent progress in epitaxial growth of SiC in the author's group is surveyed. Growth of 3C-SiC on a Si substrate, a typical success in heteroepitaxial growth with large lattice mismatch, is briefly reviewed. Step-controlled epitaxy of 6H-SiC, which the author's group named and which is a key technology for future development, is discussed in detail. The growth mechanism and effects of off-direction and off-angle are described. An electrostatic model for explaining polytype inheritance in SiC is proposed. As an advanced epitaxial growth, atomic layer epitaxy in SiC crystal growth by gas source molecular beam epitaxy is given.
引用
收藏
页码：65 / 74
页数：10
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