LOW-TEMPERATURE CONDUCTIVITY OF CERMETS

被引：7
|
作者：
GILABERT, A
KHATAMI, M
BERTHIER, S
LAFAIT, J
NEDELLEC, P
机构：
[1] UNIV HASSAN 2,DEPT PHYS,CASABLANCA 02,MOROCCO
[2] UNIV PIERRE & MARIE CURIE,OPT SOLIDES LAB,F-75252 PARIS 05,FRANCE
[3] UNIV PARIS SUD,CSNSM,F-91406 ORSAY,FRANCE
来源：
PHYSICA A | 1989年 / 157卷 / 01期
关键词：
D O I：
10.1016/0378-4371(89)90306-3
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：223 / 229
页数：7
相关论文
共 50 条
  • [31] INTERPRETATION OF THE LOW-TEMPERATURE THERMAL CONDUCTIVITY OF GRAPHITE
    HOVE, JE
    SMITH, AW
    PHYSICAL REVIEW, 1956, 104 (04): : 892 - 900
  • [32] LOW-TEMPERATURE THERMAL CONDUCTIVITY OF TITANIUM CARBIDE
    RADOSEVI.LG
    WILLIAMS, WS
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (03): : 510 - &
  • [33] Low-temperature anomalies of the hardened tin conductivity
    Voyevodin, V. N.
    Sokolenko, V., I
    Frolov, V. A.
    FUNCTIONAL MATERIALS, 2015, 22 (04): : 470 - 474
  • [34] LOW-TEMPERATURE THERMAL-CONDUCTIVITY OF POLYETHYLENE
    BHATTACHARYYA, A
    ANDERSON, AC
    JOURNAL OF LOW TEMPERATURE PHYSICS, 1979, 35 (5-6) : 641 - 646
  • [35] LOW-TEMPERATURE HALL CONDUCTIVITY OF DILUTE ALLOYS
    YAO, KL
    YI, L
    PHYSICA B, 1990, 165 : 261 - 262
  • [36] STUDIES ON LOW-TEMPERATURE CONDUCTIVITY OF ZINC PHOSPHIDE
    MURALI, KR
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1985, 4 (12) : 1471 - 1472
  • [37] LOW-TEMPERATURE AC CONDUCTIVITY OF OXIDE GLASSES
    LU, X
    JAIN, H
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1994, 55 (12) : 1433 - 1443
  • [38] CONDUCTIVITY OF CARBONS AT LOW-TEMPERATURE AS A FUNCTION OF FREQUENCY
    GIUNTINI, JC
    JULLIEN, D
    ZANCHETTA, JV
    CARMONA, F
    DELHAES, P
    JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE, 1978, 75 (05) : 460 - 461
  • [39] LOW-TEMPERATURE CONDUCTIVITY BY HOT-ELECTRONS
    KACHLISH.ZS
    SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (08): : 1903 - &
  • [40] Low-temperature conductivity of silicon doped with antimony
    Fedotov, A. K.
    Svito, I. A.
    Fedotova, V. V.
    Trafimenko, A. G.
    Danilyuk, A. L.
    Prischepa, S. L.
    SEMICONDUCTORS, 2015, 49 (06) : 705 - 711
12345