IMPURITY DIFFUSION VIA AN INTERMEDIATE SPECIES - THE B-SI SYSTEM

被引：138

作者：

COWERN, NEB ^{[1
]}

JANSSEN, KTF ^{[1
]}

VANDEWALLE, GFA ^{[1
]}

GRAVESTEIJN, DJ ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.65.2434

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Motion of a substitutional impurity via a fast-diffusing intermediate species is discussed. An analytical solution is given for the case of low impurity concentration. For short times, few atoms migrate and the solution behaves exponentially. We observe this exponential signature in the diffusion of nanometer-scale B-doping profiles in Si. The migration frequency during oxidation-enhanced diffusion is consistent with diffusion-limited knockout of an interstitial-type-B species. This is the first direct experimental evidence for dopant diffusion in Si via an intermediate species. © 1990 The American Physical Society.

引用

页码：2434 / 2437

页数：4

共 7 条

[1] GENERAL-MODEL FOR INTRINSIC DOPANT DIFFUSION IN SILICON UNDER NONEQUILIBRIUM POINT-DEFECT CONDITIONS [J].