INSITU TEMPERATURE-MEASUREMENT BY INFRARED-ABSORPTION FOR LOW-TEMPERATURE EPITAXIAL-GROWTH OF HOMO-EPITAXIAL AND HETEROEPITAXIAL LAYERS ON SILICON

被引：3
|
作者：
STURM, JC
SCHWARTZ, PV
GARONE, PM
机构：
[1] Department of Electrical Engineering, Princeton University, Princeton, 08544, N.J.
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 10期
关键词：
low temperature epitaxy; Si-Ge; temperature measurement;
D O I：
10.1007/BF02651980
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The use of infrared transmission to measure silicon wafer temperature in a lamp-heated susceptor-free reactor is described. The relevant temperature range is 400 to 800° C, and the accuracy is on the order of a few degrees centigrade. The method is then applied towards the growth of silicon and silicon-germanium alloy layers on silicon substrates. For silicon-germanium layers typical of those used in heterojunction bipolar transistors, no change in absorption compared to that of the silicon substrates is observed. © 1990 The Mineral,Metal & Materials Society,Inc.
引用
收藏
页码：1051 / 1054
页数：4
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