IMPROVED HIGH-PURITY ARC-FURNACE SILICON FOR SOLAR-CELLS

被引：11

作者：

AMICK, JA

DISMUKES, JP

FRANCIS, RW

HUNT, LP

RAVISHANKAR, PS

SCHNEIDER, M

MATTHEI, K

SYLVAIN, R

LARSEN, K

SCHEI, A

机构：

[1] SOLAR POWER CORP,WOBURN,MA 01801

[2] ELKEM AS,CTR RES & DEV,N-4620 VAAGSBYGD,NORWAY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 02期

关键词：

D O I：

10.1149/1.2113834

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：339 / 345

页数：7

共 25 条

[1]

AMICK JA, 1981, ELECTROCHEMICAL SOC, P196

[2]

AULICH HA, 1982, ELECTROCHEMICAL SOC, P177

[3]

DARAGONA FS, 1981, ELECTROCHEMICAL SOC, P119

[4]

DAVIS JR, 1982, ELECTROCHEMICAL SOFT, P14

[5]

DIETL J, 1981, ELECTROCHEMICAL SOC, P48

[6]

Dosaj V. D., 1981, [No title captured], Patent No. [US 4 247 528, 4247528]

[7] HIGH-PURITY SILICON FOR SOLAR-CELL APPLICATIONS [J].

DOSAJ, VD ;

HUNT, LP ;

SCHEI, A .

JOURNAL OF METALS, 1978, 30 (06) :8-13

[8] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348

[9]

GRAFF K, 1980, ASTM STP, V712, P136

[10]

HELMREICH D, 1981, CRYSTALS GROWTH PROP, V5

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