IMPACT IONIZATION IN GAAS-MESFETS

被引：99

作者：

HUI, K ^{[1
]}

HU, CM ^{[1
]}

GEORGE, P ^{[1
]}

KO, PK ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 03期

关键词：

D O I：

10.1109/55.46951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method to measure impact ionization current in GaAs MESFET’s is presented. The impact ionization current is then used to calculate the maximum electric field in the channel and the impact ionization coefficient. Data for the electron impact ionization coefficient in ⟨110⟩ GaAs are extended beyond previous studies by five orders of magnitude. Impact ionization is taken into account in a new gate current model. © 1990 IEEE

引用

页码：113 / 115

页数：3

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