APPLICATION OF THE GHOST PROXIMITY EFFECT CORRECTION SCHEME TO ROUND BEAM AND SHAPED BEAM ELECTRON LITHOGRAPHY SYSTEMS

被引：15
作者：
OWEN, G
RISSMAN, P
LONG, MF
机构：
[1] Hewlett-Packard Lab, Palo Alto, CA,, USA, Hewlett-Packard Lab, Palo Alto, CA, USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期
关键词：
D O I：
10.1116/1.583200
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
5
引用
收藏
页码：153 / 158
页数：6
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[3]  
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[4]   PROXIMITY EFFECT CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY BY EQUALIZATION OF BACKGROUND DOSE [J].
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[5]   GHOST SOLUBILITY RATE RATIO - A NEW PARAMETER FOR CHARACTERIZATION OF POSITIVE ELECTRON RESISTS [J].
RISSMAN, P ;
OWEN, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :159-164
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