THERMOELECTRIC PROPERTIES OF AMORPHOUS ANTIMONY

[1] INFLUENCE OF EVAPORATION PARAMETERS ON ELECTRICAL PROPERTIES OF AMORPHOUS-GERMANIUM AND SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02): : 511 - 520

[2] Brodsky A.H., 1972, J NONCRYST SOLIDES, V8, P739, DOI [10.1016/0022-3093(72)90221-9, DOI 10.1016/0022-3093(72)90221-9]

[3] OBSERVATION OF ANDERSON LOCALIZATION IN AN ELECTRON GAS [J]. PHYSICAL REVIEW, 1969, 181 (03): : 1336 - &

[4] GENERAL EXPRESSION FOR THERMOELECTRIC POWER [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (21) : 1813 - +

[5] HOPPING CONDUCTIVITY IN AMORPHOUS ANTIMONY [J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2623 - 2626

[6] Mott N. F., 1979, ELECT PROCESSES NONC

[7] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (05) : 961 - 996

[8] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS [J]. PHILOSOPHICAL MAGAZINE, 1969, 19 (160): : 835 - &

[9] The irreversible changes of the electrical resistance of the mid light reflectivity of low temperature condensed antimony, Arson, tellurium, iron and silver layers [J]. ZEITSCHRIFT FUR PHYSIK, 1940, 115 (1-2): : 17 - 46

[1] INFLUENCE OF EVAPORATION PARAMETERS ON ELECTRICAL PROPERTIES OF AMORPHOUS-GERMANIUM AND SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02): : 511 - 520

[2] Brodsky A.H., 1972, J NONCRYST SOLIDES, V8, P739, DOI [10.1016/0022-3093(72)90221-9, DOI 10.1016/0022-3093(72)90221-9]

[3] OBSERVATION OF ANDERSON LOCALIZATION IN AN ELECTRON GAS [J]. PHYSICAL REVIEW, 1969, 181 (03): : 1336 - &

[4] GENERAL EXPRESSION FOR THERMOELECTRIC POWER [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (21) : 1813 - +

[5] HOPPING CONDUCTIVITY IN AMORPHOUS ANTIMONY [J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2623 - 2626

[6] Mott N. F., 1979, ELECT PROCESSES NONC

[7] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (05) : 961 - 996

[8] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS [J]. PHILOSOPHICAL MAGAZINE, 1969, 19 (160): : 835 - &

[9] The irreversible changes of the electrical resistance of the mid light reflectivity of low temperature condensed antimony, Arson, tellurium, iron and silver layers [J]. ZEITSCHRIFT FUR PHYSIK, 1940, 115 (1-2): : 17 - 46