ELECTRICAL-PROPERTIES OF SHALLOW IMPLANTED LAYERS IN SILICON

被引：2
作者：
MUKASHEV, BN
KUSAINOV, ZA
NUSUPOV, KK
TOKMOLDIN, SZ
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 78卷 / 01期
关键词：
D O I：
10.1002/pssa.2210780146
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K19 / K22
页数：4
相关论文
共 50 条
[41]   ELECTRICAL-PROPERTIES OF THIN ANODIC SILICON DIOXIDE LAYERS GROWN IN PURE WATER [J].
GASPARD, F ;
HALIMAOUI, A ;
SARRABAYROUSE, G .
REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (01) :65-69
[42]   OPTICAL AND ELECTRICAL-PROPERTIES OF HEAVILY PHOSPHORUS-DOPED EPITAXIAL SILICON LAYERS [J].
LUBBERTS, G ;
BURKEY, BC .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (03) :760-763
[43]   CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON [J].
CULLIS, AG ;
WEBBER, HC ;
CHEW, NG .
APPLIED PHYSICS LETTERS, 1980, 36 (07) :547-550
[44]   ELECTRICAL-PROPERTIES OF CW LASER ANNEALED ION-IMPLANTED LPCVD POLYCRYSTALLINE SILICON [J].
ROULET, ME ;
DUTOIT, M ;
LUTHY, W ;
AFFOLTER, K .
HELVETICA PHYSICA ACTA, 1980, 53 (02) :279-279
[45]   ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND SHORT-TIME ANNEALED POLYCRYSTALLINE SILICON [J].
VOELSKOW, M ;
MATTHAI, J ;
KLABES, R .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (02) :781-788
[46]   ELECTRICAL-PROPERTIES OF CW LASER-ANNEALED ION-IMPLANTED POLYCRYSTALLINE SILICON [J].
ROULET, ME ;
DUTOIT, M ;
LUTHY, W ;
AFFOLTER, K .
APPLIED PHYSICS LETTERS, 1980, 37 (08) :737-739
[47]   CHANGES OF ELECTRICAL-PROPERTIES OF IMPLANTED BURIED OXIDE IN SILICON BY HIGH-TEMPERATURE ANNEALING [J].
MOGROCAMPERO, A .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :639-642
[48]   ELECTRICAL-PROPERTIES OF ION-IMPLANTED LAYERS IN HG0.79CD0.21TE [J].
MARGALIT, S ;
NEMIROVSKY, Y ;
ROTSTEIN, I .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6386-6389
[49]   ELECTRICAL-PROPERTIES OF SILICON POINT CONTACTS [J].
WEBER, L ;
LEHR, M ;
GMELIN, E .
PHYSICAL REVIEW B, 1991, 43 (05) :4317-4322
[50]   DIFFUSION AND ELECTRICAL-PROPERTIES OF NICKEL IN SILICON [J].
KITAGAWA, H ;
TANAKA, S ;
NAKASHIMA, H ;
YOSHIDA, M .
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) :38-38
12345