ELECTRICAL-PROPERTIES OF SHALLOW IMPLANTED LAYERS IN SILICON

被引：2
作者：
MUKASHEV, BN
KUSAINOV, ZA
NUSUPOV, KK
TOKMOLDIN, SZ
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 78卷 / 01期
关键词：
D O I：
10.1002/pssa.2210780146
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：K19 / K22
页数：4
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