ELECTRICAL-PROPERTIES OF SHALLOW IMPLANTED LAYERS IN SILICON

被引：2
作者：
MUKASHEV, BN
KUSAINOV, ZA
NUSUPOV, KK
TOKMOLDIN, SZ
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 78卷 / 01期
关键词：
D O I：
10.1002/pssa.2210780146
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K19 / K22
页数：4
相关论文
共 50 条
  • [21] ELECTRICAL-PROPERTIES OF SURFACE PHASES ON SILICON CAPPED BY AMORPHOUS SI LAYERS
    ZOTOV, AV
    WITTMANN, F
    LECHNER, J
    EISELE, I
    RYZHKOV, SV
    LIFSHITS, VG
    APPLIED PHYSICS LETTERS, 1995, 67 (05) : 611 - 613
  • [22] ELECTRICAL-PROPERTIES OF ION-BEAM SPUTTERED SILICON LAYERS ON SPINEL
    HINNEBERG, HJ
    WEIDNER, M
    HECHT, G
    WEISSMANTEL, C
    THIN SOLID FILMS, 1976, 33 (01) : 29 - 34
  • [23] STUDY OF SOME OPTICAL AND ELECTRICAL-PROPERTIES OF HEAVILY DOPED SILICON LAYERS
    SLAOUI, A
    FOGARASSY, E
    MULLER, JC
    SIFFERT, P
    JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 65 - 71
  • [24] ELECTRICAL-PROPERTIES OF FOCUSED-ION-BEAM BORON-IMPLANTED SILICON
    TAMURA, M
    SHUKURI, S
    TACHI, S
    ISHITANI, T
    TAMURA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11): : L700 - L702
  • [25] STRUCTURAL AND ELECTRICAL-PROPERTIES OF BF-2+ IMPLANTED, RAPID ANNEALED SILICON
    LUNNON, ME
    CHEN, JT
    BAKER, JE
    APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1056 - 1058
  • [26] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
    GAT, A
    GIBBONS, JF
    MAGEE, TJ
    PENG, J
    DELINE, VR
    WILLIAMS, P
    EVANS, CA
    APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278
  • [27] ELECTRICAL-PROPERTIES OF SILICON-IMPLANTED FURNACE-ANNEALED SILICON-ON-SAPPHIRE DEVICES
    ROULET, ME
    SCHWOB, P
    GOLECKI, I
    NICOLET, MA
    ELECTRONICS LETTERS, 1979, 15 (17) : 527 - 529
  • [28] ELECTRICAL PROPERTIES OF SILICON LAYERS IMPLANTED WITH BF2 MOLECULES
    MULLER, H
    RYSSEL, H
    SCHMID, K
    JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 2006 - &
  • [29] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON
    BROTHERTON, SD
    BRADLEY, P
    BICKNELL, J
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3396 - 3403
  • [30] THE ELECTRICAL-PROPERTIES OF SULFUR IN SILICON
    BROTHERTON, SD
    KING, MJ
    PARKER, GJ
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4649 - 4658
12345