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- [4] RADIATION DEFECTS AND ELECTRICAL-PROPERTIES OF SILICON LAYERS CONTAINING SB AND AS IMPLANTED WITH SI+ IONS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 73 (04): : 503 - 506
- [7] THERMAL-ANNEALING EFFECTS ON THE STRUCTURAL AND ELECTRICAL-PROPERTIES OF HEAVY-ION-IMPLANTED SILICON LAYERS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 576 - 579
- [10] Electrical properties of silicon layers implanted with ytterbium ions Semiconductors, 2002, 36 : 126 - 129