MICROWAVE FIELD-EFFECT TRANSISTORS 1976

被引：150
作者：
LIECHTI, CA [1 ]
机构：
[1] HEWLETT PACKARD CO, SOLID STATE LAB, PALO ALTO, CA 94304 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1976年 / 24卷 / 06期
关键词：
D O I：
10.1109/TMTT.1976.1128845
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：279 / 330
页数：52
相关论文
共 257 条
[1]  
ABBOTT D, 1975, INT ELECTRON DEVICES, P243
[2]   SOME ASPECTS OF GAAS MESFET RELIABILITY [J].
ABBOTT, DA ;
TURNER, JA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :317-321
[3]  
ABE H, 1976, IEEE INT SOLID STATE, P164
[4]   GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS [J].
ADAMS, AC ;
PRUNIAUX, BR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) :408-414
[5]   THEORETICAL STUDY OF HIGH-FREQUENCY PERFORMANCE OF A SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR FABRICATED ON A HIGH-RESISTIVITY SUBSTRATE [J].
ALLEY, GD ;
TALLEY, HE .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, TT22 (03) :183-189
[6]   EFFECT OF SOURCE LEAD INDUCTANCE ON NOISE FIGURE OF A GAAS FET [J].
ANASTASS.A ;
STRUTT, MJO .
PROCEEDINGS OF THE IEEE, 1974, 62 (03) :406-408
[7]   EXPERIMENTAL AND COMPUTED 4 SCATTERING AND 4 NOISE PARAMETERS OF GAAS FETS UP TO 4 GHZ [J].
ANASTASSIOU, A ;
STRUTT, MJO .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (02) :138-140
[8]   EXPERIMENTAL GAIN AND NOISE PARAMETERS OF MICROWAVE GAAS FETS IN L AND S BANDS [J].
ANASTASSIOU, A ;
STRUTT, MJO .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (06) :419-422
[9]  
Anderson R.W., 1967, Hewlett-Packard Journal, V18, P13
[10]  
ANGUS J, 1975, P EUROPEAN MICROWAVE, P291
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