MICROWAVE FIELD-EFFECT TRANSISTORS 1976

被引：149

作者：

LIECHTI, CA ^{[1
]}

机构：

[1] HEWLETT PACKARD CO, SOLID STATE LAB, PALO ALTO, CA 94304 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1976年 / 24卷 / 06期

关键词：

D O I：

10.1109/TMTT.1976.1128845

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：279 / 330

页数：52

相关论文

共 257 条

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[7] EXPERIMENTAL AND COMPUTED 4 SCATTERING AND 4 NOISE PARAMETERS OF GAAS FETS UP TO 4 GHZ
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[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (02) : 138 - 140
[8] EXPERIMENTAL GAIN AND NOISE PARAMETERS OF MICROWAVE GAAS FETS IN L AND S BANDS
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