NEW APPROACH TO THE MANUFACTURE OF LOW-THRESHOLD 1.5 MU-M DISTRIBUTED FEEDBACK LASERS

被引：13

作者：

WESTBROOK, LD ^{[1
]}

NELSON, AW ^{[1
]}

DIX, C ^{[1
]}

机构：

[1] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 11期

关键词：

D O I：

10.1049/el:19830290

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：423 / 424

页数：2

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[1] 1.55 MU-M GAINASP-INP DISTRIBUTED FEEDBACK LASERS
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[4] IMPROVED LPE TECHNIQUES FOR LOW THRESHOLD LASERS AT 1.55 MU-M IN THE QUATERNARY IN-GA-AS-P INP SYSTEM
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[6] ROOM-TEMPERATURE CW OPERATION OF DISTRIBUTED-FEEDBACK BURIED-HETEROSTRUCTURE INGAASP INP LASERS EMITTING AT 1.57 MU-M
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[J]. ELECTRONICS LETTERS, 1981, 17 (25-2) : 961 - 963
[7] HIGH-QUALITY INP SURFACE CORRUGATIONS FOR 1.55-MU-M INGAASP DFB LASERS FABRICATED USING ELECTRON-BEAM LITHOGRAPHY
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[J]. ELECTRONICS LETTERS, 1982, 18 (20) : 863 - 865