DIFFUSION-DRIFT EFFECTS IN SEMICONDUCTORS WITH DEEP IMPURITY LEVELS

被引：0

作者：

ALMAZOV, AB ^{[1
]}

MIKHAILOV, GB ^{[1
]}

机构：

[1] MOSCOW ELECTR MACHINERY INST,MOSCOW,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 8卷 / 11期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1445 / 1446

页数：2

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