DIFFUSION-DRIFT EFFECTS IN SEMICONDUCTORS WITH DEEP IMPURITY LEVELS

被引：0

作者：

ALMAZOV, AB ^{[1
]}

MIKHAILOV, GB ^{[1
]}

机构：

[1] MOSCOW ELECTR MACHINERY INST,MOSCOW,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 8卷 / 11期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1445 / 1446

页数：2

共 50 条

[21] CARRIER EXCLUSION IN COMPENSATED SEMICONDUCTORS WITH DEEP IMPURITY LEVELS.
Adirovich, E.I.
Aronov, D.A.
Knigin, P.I.
Korolev, Yu.S.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (12): : 1567 - 1572
[22] IMPROVED METHOD OF DETERMINING DEEP IMPURITY LEVELS AND PROFILES IN SEMICONDUCTORS
GOTO, G
YANAGISAWA, S
WADA, O
TAKANASHI, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (07) : 1127 - 1133
[23] DEEP LEVELS ASSOCIATED WITH (VACANCY, IMPURITY) PAIRS IN COVALENT SEMICONDUCTORS
MYLES, CW
SANKEY, OF
PHYSICAL REVIEW B, 1984, 29 (12): : 6810 - 6823
[24] INJECTION-FIELD EFFECT IN SEMICONDUCTORS WITH DEEP IMPURITY LEVELS
GASANOV, LS
KRUZHANO.YV
STAFEEV, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 297 - 298
[25] Diffusion-Drift Modeling of Carbon-Based Nanowire FETs
Ancona, M. G.
Boos, J. B.
2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD), 2015, : 337 - 340
[26] A drift-diffusion model for semiconductors with temperature effects
Xu, Xiangsheng
PROCEEDINGS OF THE ROYAL SOCIETY OF EDINBURGH SECTION A-MATHEMATICS, 2009, 139 : 1101 - 1119
[27] THEORY AND METHOD OF ELIMINATING NUMERICAL OSCILLATION OF DIFFUSION-DRIFT EQUATION
HE, Y
CAO, GX
WANG, YM
CHINESE SCIENCE BULLETIN, 1991, 36 (15): : 1253 - 1256
[28] THEORY AND METHOD OF ELIMINATING NUMERICAL OSCILLATION OF DIFFUSION-DRIFT EQUATION
何野
曹国祥
王元明
ChineseScienceBulletin, 1991, (15) : 1253 - 1256
[29] WAVE OF IONIZATION IN STREAMER BREAKDOWN OF A GAS - DIFFUSION-DRIFT APPROXIMATION
SHVEIGERT, VA
HIGH TEMPERATURE, 1990, 28 (06) : 792 - 799
[30] Electrostatics and diffusion-drift transport in graphene field effect transistors
Zebrev, G. I.
2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2008, : 159 - 162

← 1 2 3 4 5 →