共 50 条
- [1] INJECTION IN SEMICONDUCTORS WITH DEEP IMPURITY LEVELS SOVIET PHYSICS-SOLID STATE, 1964, 6 (01): : 63 - 72
- [3] ANNIHILATION OF POSITRONS ON DEEP IMPURITY LEVELS IN SEMICONDUCTORS FIZIKA TVERDOGO TELA, 1974, 16 (03): : 730 - 732
- [4] Diffusion-drift effect on grain boundary grooving DIFFUSION, SEGREGATION AND STRESSES IN MATERIALS, 2003, 216-2 : 217 - 223
- [5] Excitation density, diffusion-drift, and proportionality in scintillators PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (02): : 426 - 438
- [6] AMBIPOLAR DRIFT MOBILITY AND EFFECTIVE COEFFICIENT OF DIFFUSION IN COMPENSATED SEMICONDUCTORS WITH 2 DEEP LEVELS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (05): : 585 - 586
- [9] Diffusion-drift model of injection lasers with double heterostructure 16TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, 2015, 586
- [10] INFLUENCE OF DEEP IMPURITY LEVELS ON DOUBLE INJECTION IN SEMICONDUCTORS PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 13 (02): : K145 - +