ELECTRON-MOBILITY IN N-TYPE GAAS AT 77-K - DETERMINATION OF THE COMPENSATION RATIO

被引:93
|
作者
WALUKIEWICZ, W
LAGOWSKI, J
GATOS, HC
机构
关键词
D O I
10.1063/1.329986
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:769 / 770
页数:2
相关论文
共 50 条
  • [41] ELECTRON-MOBILITY IN N-TYPE HG1-XCDXTE AND HG1-XZNXTE ALLOYS
    PATTERSON, JD
    GOBBA, WA
    LEHOCZKY, SL
    JOURNAL OF MATERIALS RESEARCH, 1992, 7 (08) : 2211 - 2218
  • [42] EFFECT OF ELECTRON-ELECTRON COLLISIONS ON MOBILITY OF WARM ELECTRONS IN N-TYPE GE AND N-TYPE SI AT 78 DEGREES K
    DAVYDOV, AB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (10): : 1239 - +
  • [43] METHOD FOR DETERMINATION OF DEGREE OF COMPENSATION OF N-TYPE SI FROM HALL-MOBILITY
    DAKHOVSKII, IV
    STERLIKOV, YI
    LEVINZON, DI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1298 - 1299
  • [44] Electron mobility of N-type GaN films
    Ng, HM
    Doppalapudi, D
    Singh, R
    Moustakas, TD
    NITRIDE SEMICONDUCTORS, 1998, 482 : 507 - 512
  • [45] MOBILITY OF HOT ELECTRON IN N-TYPE INAS
    CURBY, RC
    FERRY, DK
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 303 - &
  • [46] MOBILITY OF HOT ELECTRON IN N-TYPE INAS
    CURBY, RC
    FERRY, DK
    PHYSICS LETTERS A, 1970, A 32 (04) : 236 - &
  • [47] THE ELECTRON-MOBILITY TRANSITION IN N-GAAS HEAVILY-DOPED CHANNELS
    OHKURA, Y
    MIZUTA, H
    OHBU, I
    KAGAYA, O
    KATAYAMA, K
    IHARA, S
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 811 - 814
  • [48] ELECTRON-ELECTRON INTERACTIONS, COUPLED PLASMON-PHONON MODES, AND MOBILITY IN N-TYPE GAAS
    SANBORN, BA
    PHYSICAL REVIEW B, 1995, 51 (20): : 14256 - 14264
  • [49] THE MAJORITY CARRIER MOBILITY OF N-TYPE AND P-TYPE HG0.78CD0.22TE LIQUID-PHASE EPITAXIAL-FILMS AT 77-K
    CHEN, MC
    COLOMBO, L
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) : 2916 - 2920
  • [50] A COMPARISON BETWEEN ELECTRON-MOBILITY IN N-TYPE HG1-XCDXTE AND HG1-XZNXTE
    ABDELHAKIEM, W
    PATTERSON, JD
    LEHOCZKY, SL
    MATERIALS LETTERS, 1991, 11 (1-2) : 47 - 51