共 50 条
- [1] CALCULATION OF ELECTRON-MOBILITY IN EPITAXIAL N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (01): : 99 - 100
- [2] ELECTRON-MOBILITY IN PURE N-TYPE INSB IN 20-77 DEGREE K RANGE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1005 - 1008
- [6] IMPACT IONIZATION IN N-TYPE INSB AT 77-K APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (03): : 151 - 160
- [7] MOBILITY OF ELECTRONS IN N-TYPE INSB AT 77-K IN THE AVALANCHE REGIME - THEORY AND EXPERIMENT PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 90 (02): : K149 - K152
- [8] ELECTRON-MOBILITY IN STRONGLY COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1258 - 1261
- [9] DEPENDENCE OF THE MOBILITY OF ELECTRONS IN N-TYPE CDXHD1-XTE ON THEIR DENSITY AT 77-K SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (11): : 1211 - 1213