AUGER ANALYSIS OF SILICON THIN-FILMS DEPOSITED ON CARBON AT HIGH-TEMPERATURES

被引：13

作者：

CHANG, CA ^{[1
]}

SIEKHAUS, WJ ^{[1
]}

机构：

[1] UNIV CALIF,INORG MAT RES DIV,LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 08期

关键词：

D O I：

10.1063/1.322245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3402 / 3407

页数：6

共 14 条

[1]

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[3]

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[4]

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[5] CHEMICAL EFFECTS IN AUGER-ELECTRON SPECTROSCOPY [J].

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GRANT, JT ;

DOOLEY, GJ .

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[6]

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[7] GROWTH OF SINGLE-CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICON [J].

KHAN, IH ;

SUMMERGRAD, RN .

APPLIED PHYSICS LETTERS, 1967, 11 (01) :12-+

[8] OXIDATION OF SI AND GAAS IN AIR AT ROOM-TEMPERATURE [J].

LUKES, F .

SURFACE SCIENCE, 1972, 30 (01) :91-&

[9]

McKee D. W., 1973, ANNU REV MATER SCI, V3, P195

[10] EPITAXIAL GROWTH OF SIC FILM ON SILICON SUBSTRATE AND ITS CRYSTAL STRUCTURE [J].

NAKASHIMA, H ;

SUGANO, T ;

YANAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (10) :874-+

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