AUGER ANALYSIS OF SILICON THIN-FILMS DEPOSITED ON CARBON AT HIGH-TEMPERATURES

被引：13

作者：

CHANG, CA ^{[1
]}

SIEKHAUS, WJ ^{[1
]}

机构：

[1] UNIV CALIF,INORG MAT RES DIV,LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 08期

关键词：

D O I：

10.1063/1.322245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3402 / 3407

页数：6

相关论文

共 14 条

[1] BIEDERMAN E, 1966, J APPL PHYS, V37, P4288
[2] ENHANCED CRYSTALLINITY OF SILICON FILM DEPOSITED AT LOW-TEMPERATURE
CHANG, CA
SIEKHAUS, WJ
KAMINSKA, T
HUO, DTC
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 178 - 180
[3] CHANG CC, UNPUBLISHED
[4] CHU TS, COMMUNICATION
[5] CHEMICAL EFFECTS IN AUGER-ELECTRON SPECTROSCOPY
HAAS, TW
GRANT, JT
DOOLEY, GJ
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1853 - &
[6] KAMINSKA T, COMMUNICATION
[7] GROWTH OF SINGLE-CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICON
KHAN, IH
SUMMERGRAD, RN
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (01) : 12 - +
[8] OXIDATION OF SI AND GAAS IN AIR AT ROOM-TEMPERATURE
LUKES, F
[J]. SURFACE SCIENCE, 1972, 30 (01) : 91 - &
[9] McKee D. W., 1973, ANNU REV MATER SCI, V3, P195
[10] EPITAXIAL GROWTH OF SIC FILM ON SILICON SUBSTRATE AND ITS CRYSTAL STRUCTURE
NAKASHIMA, H
SUGANO, T
YANAI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (10) : 874 - +