A 3dB directional coupler and a balanced pin diode pair have been monolithically integrated in the InGaAs/InGaAsP/InP material system, together with the preamplifier front-end: a JFET and a load resistor. All the layers were grown in a single MOCVD epitaxy run. At 1.55mum, this integrated receiver coupled to a hybrid GaAs amplifier exhibits a 3dB bandwidth of 2GHz with a very low average input noise of 9pA/square-rootHz in the 130MHz-2GHz range, and a common mode rejection ratio below -20dB.