JOSEPHSON TUNNELING IN BI2SR2CACU2O8+DELTA SINGLE-CRYSTAL BREAK JUNCTIONS

被引：10

作者：

TAO, HJ ^{[1
]}

LU, FR ^{[1
]}

ZHANG, G ^{[1
]}

WOLF, EL ^{[1
]}

机构：

[1] POLYTECH INST NEW YORK,DEPT PHYS,6 METROTECH CTR,BROOKLYN,NY 11201

来源：

PHYSICA C | 1994年 / 224卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(94)90612-2

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Josephson tunneling I-V characteristics have been observed in break junctions of oxygen-annealed Bi2Sr2CaCu2O8 (Bi-2212) single crystals, with I(c)R(n) almost-equal-to 21.3 MV, and with a sharp quasiparticle edge at 2DELTA almost-equal-to 2 x 20 mV. This demonstrates that low values of the I(c)R(n) product, thus far as observed in HTS thin-film junctions, do not represent a fundamental limitation. The sharp quasiparticle current rise at eV=2DELTA in these SIS break junctions appears to afford an accurate measurement to be made of a well-defined gap edge.

引用

页码：117 / 120

页数：4

共 14 条

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