PARALLELIZATION OF MOLECULAR ELECTRONIC-STRUCTURE CALCULATION

被引:0
|
作者
BHUSARI, AD
BHATE, VV
PAL, S
机构
来源
CURRENT SCIENCE | 1992年 / 62卷 / 03期
关键词
D O I
暂无
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Electronic-structure calculations are useful for understanding atomic and molecular processes. Here we present a parallel ab initio algorithm developed for the preliminary electronic-structure program with special emphasis on four-index transformation for the transputers at the Centre for Development of Advanced Computing (C-DAC) in Pune. We also present results obtained on a four-node machine.
引用
收藏
页码:293 / 297
页数:5
相关论文
共 50 条
  • [31] MOLECULAR ELECTRONIC-STRUCTURE BY COMBINATION OF FRAGMENTS
    KIRTMAN, B
    JOURNAL OF PHYSICAL CHEMISTRY, 1982, 86 (07): : 1059 - 1064
  • [32] CALCULATION OF SI-29 CHEMICAL-SHIFTS AS A PROBE FOR MOLECULAR AND ELECTRONIC-STRUCTURE
    CREMER, D
    OLSSON, L
    OTTOSSON, H
    JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 1994, 119 (01): : 91 - 109
  • [33] CALCULATION OF THE ELECTRONIC-STRUCTURE OF STEPPED METAL-SURFACES
    ISHIDA, H
    LIEBSCH, A
    PHYSICAL REVIEW B, 1992, 46 (11): : 7153 - 7156
  • [34] ABINITIO CALCULATION OF THE SURFACE ELECTRONIC-STRUCTURE OF MG(0001)
    CHULKOV, EV
    SILKIN, VM
    SOLID STATE COMMUNICATIONS, 1986, 58 (04) : 273 - 275
  • [35] CLUSTER CALCULATION OF ELECTRONIC-STRUCTURE AND HYPERFINE INTERACTIONS FOR GARNETS
    NAGEL, S
    HAFNER, SS
    ACTA CRYSTALLOGRAPHICA SECTION A, 1984, 40 : C178 - C178
  • [36] CLUSTER CALCULATION OF THE ELECTRONIC-STRUCTURE OF BORON IMPURITIES IN SILICON
    BUNIN, MA
    MATVEEV, YA
    PETROV, NA
    SUKHETSKII, YV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1291 - 1295
  • [37] VALENCE-BOND CALCULATION OF ELECTRONIC-STRUCTURE OF BENZENE
    NORBECK, JM
    GALLUP, GA
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1974, 96 (11) : 3386 - 3393
  • [38] MOMENTUM SPACE - A SPACE FOR THE CALCULATION AND ANALYSIS OF ELECTRONIC-STRUCTURE
    DEFRANCESCHI, M
    DEWINDT, L
    FRIPIAT, JG
    DELHALLE, J
    JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 1992, 90 (1-2): : 179 - 196
  • [39] ELECTRONIC-STRUCTURE CALCULATION OF MN-DOPED GAAS
    PINO, AD
    FAZZIO, A
    LEITE, JR
    SOLID STATE COMMUNICATIONS, 1982, 44 (03) : 369 - 372
  • [40] A CALCULATION OF CHANGES IN THE ELECTRONIC-STRUCTURE OF SILICON DURING DISORDERING
    GREKHOV, AM
    TSYASHCHENKO, YP
    INORGANIC MATERIALS, 1987, 23 (03) : 321 - 324