EARLY STAGES OF EPITAXIAL COSI2 FORMATION ON SI(111) SURFACE AS INVESTIGATED BY ARUPS, XPS, LEED AND WORK FUNCTION VARIATION

被引：20

作者：

PIRRI, C ^{[1
]}

PERUCHETTI, JC ^{[1
]}

GEWINNER, G ^{[1
]}

DERRIEN, J ^{[1
]}

机构：

[1] CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE

来源：

SURFACE SCIENCE | 1985年 / 152卷 / APR期

关键词：

D O I：

10.1016/0039-6028(85)90527-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1106 / 1112

页数：7

共 10 条

[1] FORMATION AND STRUCTURE OF EPITAXIAL NISI2 AND COSI2 [J].

CHEN, LJ ;

MAYER, JW ;

TU, KN .

THIN SOLID FILMS, 1982, 93 (1-2) :135-141

[2]

GIBSON JM, 1982, APPL PHYS LETT, V41, P818, DOI 10.1063/1.93699

[3] CHEMISORPTION OF CO ON CO(0001) - STRUCTURE AND ELECTRONIC-PROPERTIES [J].

GREUTER, F ;

HESKETT, D ;

PLUMMER, EW ;

FREUND, HJ .

PHYSICAL REVIEW B, 1983, 27 (12) :7117-7135

[4] DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES [J].

HIMPSEL, FJ ;

HOLLINGER, G ;

POLLAK, RA .

PHYSICAL REVIEW B, 1983, 28 (12) :7014-7018

[5] COBALT DISILICIDE EPITAXIAL-GROWTH ON THE SILICON (111) SURFACE [J].

PIRRI, C ;

PERUCHETTI, JC ;

GEWINNER, G ;

DERRIEN, J .

PHYSICAL REVIEW B, 1984, 29 (06) :3391-3397

[6]

Poate J M, 1978, THIN FILMS INTERDIFF

[7] DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE [J].

SAITOH, S ;

ISHIWARA, H ;

FURUKAWA, S .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :203-205

[8] BONDING AND STRUCTURE OF COSI2 AND NISI2 [J].

TERSOFF, J ;

HAMANN, DR .

PHYSICAL REVIEW B, 1983, 28 (02) :1168-1170

[9] GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111) [J].

TUNG, RT ;

BEAN, JC ;

GIBSON, JM ;

POATE, JM ;

JACOBSON, DC .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :684-686

[10] ELECTRON DELOCALIZATION AND CHARACTERIZATION OF L3MM AUGER-SPECTRA OF 3D TRANSITION-METALS [J].

YIN, LI ;

TSANG, T ;

ADLER, I .

PHYSICAL REVIEW B, 1977, 15 (06) :2974-2983

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