ELECTRON-MOBILITY AND STATIC DIELECTRIC-CONSTANT OF CD3AS2 AT 4.2K

被引：41
|
作者：
JAYGERIN, JP [1 ]
AUBIN, MJ [1 ]
CARON, LG [1 ]
机构：
[1] UNIV SHERBROOKE,DEPT PHYS,RECH SEMICONDUCTEURS & DIELECT GRP,SHERBROOKE J1K 2R1,QUEBEC,CANADA
来源：
SOLID STATE COMMUNICATIONS | 1977年 / 21卷 / 08期
关键词：
D O I：
10.1016/0038-1098(77)91149-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：771 / 774
页数：4
相关论文
共 50 条
  • [21] DIELECTRIC-CONSTANT AND ITC MEASUREMENTS OF BAF2-DY3+
    JEANDEL, G
    WARIN, A
    MORLOT, G
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1988, 108 (01): : 183 - 187
  • [22] LARGE STATIC DIELECTRIC-CONSTANT IN THE HIGH-TEMPERATURE PHASE OF POLYCRYSTALLINE YBA2CU3OX
    TESTARDI, LR
    MOULTON, WG
    MATHIAS, H
    NG, HK
    REY, CM
    PHYSICAL REVIEW B, 1988, 37 (04): : 2324 - 2325
  • [23] ELECTRON-MOBILITY IN EVAPORATED LAYERS OF AS2S3-CDI2
    BANERJI, J
    HIRSCH, J
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (21): : L473 - L473
  • [24] TEMPERATURE AND INTERFACE-ROUGHNESS DEPENDENCE OF THE ELECTRON-MOBILITY IN HIGH-MOBILITY SI(100) INVERSION-LAYERS BELOW 4.2-K
    KRUITHOF, GH
    KLAPWIJK, TM
    BAKKER, S
    PHYSICAL REVIEW B, 1991, 43 (08): : 6642 - 6649
  • [25] A STUDY OF THE RELAXATION OF DISCOMMENSURATIONS IN K2ZNCL4 .3. MEASUREMENTS OF THE COMPLEX DIELECTRIC-CONSTANT
    PAN, XQ
    UNRUH, HG
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (33) : 6909 - 6918
  • [26] Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts
    Chen, Zhi-Gang
    Zhang, Cheng
    Zou, Yichao
    Zhang, Enze
    Yang, Lei
    Hong, Min
    Xiu, Faxian
    Zou, Jin
    NANO LETTERS, 2015, 15 (09) : 5830 - 5834
  • [27] DIELECTRIC-CONSTANT OF GLASSY AS2TE3 + YX AND ITS MEASUREMENT
    KOCKA, J
    HLOUSEK, P
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1975, 25 (11) : 1315 - 1318
  • [28] CRITICAL SLOWING-DOWN AND STATIC DIELECTRIC-CONSTANT OF MONOCLINIC RBD2PO4
    KOMUKAE, M
    MAKITA, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1985, 54 (11) : 4359 - 4369
  • [29] THERMAL-CONDUCTIVITY AND ELECTRICAL-RESISTIVITY OF CADMIUM ARSENIDE (CD3AS2) IN THE TEMPERATURE-RANGE 4.2-40 K
    BARTKOWSKI, K
    RAFALOWICZ, J
    ZDANOWICZ, W
    INTERNATIONAL JOURNAL OF THERMOPHYSICS, 1986, 7 (04) : 765 - 772
  • [30] Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd3As2
    Narayanan, A.
    Watson, M. D.
    Blake, S. F.
    Bruyant, N.
    Drigo, L.
    Chen, Y. L.
    Prabhakaran, D.
    Yan, B.
    Felser, C.
    Kong, T.
    Canfield, P. C.
    Coldea, A. I.
    PHYSICAL REVIEW LETTERS, 2015, 114 (11)
12345