RECENT ADVANCES IN MOCVD GROWTH OF INXGA1-XASYP1-Y ALLOYS

[1] ANTYPAS GA, 1973, I PHYS C SER, V17, P48

[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[4] LOW THRESHOLD RIDGE WAVEGUIDE LASER AT 1.55-MU-M [J]. ELECTRONICS LETTERS, 1983, 19 (21) : 877 - 879

[5] CRYSTAL-GROWTH AND PROPERTIES OF BINARY, TERNARY AND QUATERNARY (IN,GA)(AS,P) ALLOYS GROWN BY THE HYDRIDE VAPOR-PHASE EPITAXY TECHNIQUE [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (04): : 309 - 375

[6] 1.2-1.6-MU-M GAXIN1-XASYP1-Y-INP DH LASERS GROWN BY LPMOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 389 - 397

[7] VERY LOW THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LP MOCVD [J]. ELECTRONICS LETTERS, 1983, 19 (09) : 336 - 337

[8] AGING TEST OF MOCVD SHALLOW PROTON STRIPE GAINASP-INP, DH LASER DIODE EMITTING AT 1.5 MU-M [J]. ELECTRONICS LETTERS, 1983, 19 (13) : 481 - 483

[9] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 585 - 587

[10] RAZEGHI M, UNPUB APPL PHYS LETT

[1] ANTYPAS GA, 1973, I PHYS C SER, V17, P48

[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[4] LOW THRESHOLD RIDGE WAVEGUIDE LASER AT 1.55-MU-M [J]. ELECTRONICS LETTERS, 1983, 19 (21) : 877 - 879

[5] CRYSTAL-GROWTH AND PROPERTIES OF BINARY, TERNARY AND QUATERNARY (IN,GA)(AS,P) ALLOYS GROWN BY THE HYDRIDE VAPOR-PHASE EPITAXY TECHNIQUE [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (04): : 309 - 375

[6] 1.2-1.6-MU-M GAXIN1-XASYP1-Y-INP DH LASERS GROWN BY LPMOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 389 - 397

[7] VERY LOW THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LP MOCVD [J]. ELECTRONICS LETTERS, 1983, 19 (09) : 336 - 337

[8] AGING TEST OF MOCVD SHALLOW PROTON STRIPE GAINASP-INP, DH LASER DIODE EMITTING AT 1.5 MU-M [J]. ELECTRONICS LETTERS, 1983, 19 (13) : 481 - 483

[9] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 585 - 587

[10] RAZEGHI M, UNPUB APPL PHYS LETT