RECENT ADVANCES IN MOCVD GROWTH OF INXGA1-XASYP1-Y ALLOYS

被引:30
作者
RAZEGHI, M
DUCHEMIN, JP
机构
关键词
D O I
10.1016/0022-0248(84)90260-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
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页码:145 / 149
页数:5
相关论文
共 15 条
[1]  
ANTYPAS GA, 1973, I PHYS C SER, V17, P48
[2]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[3]  
DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637
[4]   LOW THRESHOLD RIDGE WAVEGUIDE LASER AT 1.55-MU-M [J].
KAMINOW, IP ;
STULZ, LW ;
KO, JS ;
MILLER, BI ;
FELDMAN, RD ;
DEWINTER, JC ;
POLLACK, MA .
ELECTRONICS LETTERS, 1983, 19 (21) :877-879
[5]   CRYSTAL-GROWTH AND PROPERTIES OF BINARY, TERNARY AND QUATERNARY (IN,GA)(AS,P) ALLOYS GROWN BY THE HYDRIDE VAPOR-PHASE EPITAXY TECHNIQUE [J].
OLSEN, GH ;
ZAMEROWSKI, TJ .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (04) :309-375
[6]   1.2-1.6-MU-M GAXIN1-XASYP1-Y-INP DH LASERS GROWN BY LPMOCVD [J].
RAZEGHI, M ;
DECREMOUX, B ;
DUCHEMIN, JP .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :389-397
[7]   VERY LOW THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LP MOCVD [J].
RAZEGHI, M ;
HERSEE, S ;
HIRTZ, P ;
BLONDEAU, R ;
DECREMOUX, B ;
DUCHEMIN, JP .
ELECTRONICS LETTERS, 1983, 19 (09) :336-337
[8]   AGING TEST OF MOCVD SHALLOW PROTON STRIPE GAINASP-INP, DH LASER DIODE EMITTING AT 1.5 MU-M [J].
RAZEGHI, M ;
HIRTZ, P ;
BLONDEAU, R ;
DECREMOUX, B ;
DUCHEMIN, JP .
ELECTRONICS LETTERS, 1983, 19 (13) :481-483
[9]   GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
RAZEGHI, M ;
HIRTZ, JP ;
ZIEMELIS, UO ;
DELALANDE, C ;
ETIENNE, B ;
VOOS, M .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :585-587
[10]  
RAZEGHI M, UNPUB APPL PHYS LETT