POROUS SILICON MICROSTRUCTURE AS STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY

被引：47

作者：

CHUANG, SF ^{[1
]}

COLLINS, SD ^{[1
]}

SMITH, RL ^{[1
]}

机构：

[1] UNIV CALIF DAVIS,DEPT ELECT ENGN & COMP SCI,DAVIS,CA 95616

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 15期

关键词：

D O I：

10.1063/1.102239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1540 / 1542

页数：3

共 14 条

[1] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON
BEALE, MIJ
BENJAMIN, JD
UREN, MJ
CHEW, NG
CULLIS, AG
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) : 622 - 636
[2] OBSERVATION OF SURFACE DEFECTS IN ELECTROLYTICALLY ETCHED SILICON BY INFRARED MICROSCOPY
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ZWICKER, WK
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1216 - +
[3] PORE-SIZE DISTRIBUTION IN POROUS SILICON STUDIED BY ADSORPTION-ISOTHERMS
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HERINO, R
BARLA, K
PFISTER, JC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1611 - 1614
[4] CHUANG SF, 1988, IEEE SOLID STATE SEN, P151
[5] POROSITY AND PORE-SIZE DISTRIBUTIONS OF POROUS SILICON LAYERS
HERINO, R
BOMCHIL, G
BARLA, K
BERTRAND, C
GINOUX, JL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) : 1994 - 2000
[6] FIPOS (FULL ISOLATION BY POROUS OXIDIZED SILICON) TECHNOLOGY AND ITS APPLICATION TO LSIS
IMAI, K
UNNO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) : 297 - 302
[7] A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON
IMAI, K
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (02) : 159 - &
[8] ELECTRON-DIFFRACTION IN POROUS SILICON
PHILLIPP, F
URBAN, K
WILKENS, M
[J]. ULTRAMICROSCOPY, 1984, 13 (04) : 379 - 385
[9] A THEORETICAL-MODEL OF THE FORMATION MORPHOLOGIES OF POROUS SILICON
SMITH, RL
CHUANG, SF
COLLINS, SD
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (06) : 533 - 541
[10] AN INTEGRATED SENSOR FOR ELECTROCHEMICAL MEASUREMENTS
SMITH, RL
SCOTT, DC
[J]. IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1986, 33 (02) : 83 - 90

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