共 50 条
- [1] LOCAL TEMPERATURE RISE DURING LASER-INDUCED ETCHING OF GALLIUM-ARSENIDE IN SICL4 ATMOSPHERE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09): : L705 - L708
- [4] STOICHIOMETRIC CHANGE IN GALLIUM-ARSENIDE AFTER LASER-INDUCED THERMOCHEMICAL ETCHING JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04): : L270 - L272
- [5] RESIDUAL LOCAL STRAIN IN GALLIUM-ARSENIDE INDUCED BY LASER PYROLYTIC ETCHING IN CCL4 ATMOSPHERE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09): : L755 - L757
- [9] A STUDY OF GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING PARAMETERS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1604 - 1605
- [10] LASER-ASSISTED ETCHING OF GALLIUM-ARSENIDE IN CHLORINE - THE ROLE OF ETCHING PRODUCTS ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1990, 200 : 116 - PHYS