AVALANCHE REGION OF IMPATT DIODES

被引：60

作者：

GUMMEL, HK

SCHARFETTER, DL

机构：

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1966年 / 45卷 / 10期

关键词：

D O I：

10.1002/j.1538-7305.1966.tb02436.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1797 / +

页数：1

共 10 条

[1] ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J].

GILDEN, M ;

HINES, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :169-&

[2] A SILICON DIODE MICROWAVE OSCILLATOR [J].

JOHNSTON, RL ;

DELOACH, BC ;

COHEN, BG .

BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (02) :369-+

[3] EXPERIMENTAL CHARACTERIZATION OF A NEGATIVE-RESISTANCE AVALANCHE DIODE [J].

JOSENHANS, JG ;

MISAWA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :206-+

[4]

JOSENHANS JG, PRIVATE COMMUNICATIO

[5] READ DIODE-AN AVALANCHING TRANSIT-TIME NEGATIVE-RESISTANCE OSCILLATOR (SI IMPURITY EFFECTS E/T) [J].

LEE, CA ;

BATDORF, RL ;

WIEGMANN, W ;

KAMINSKY, G .

APPLIED PHYSICS LETTERS, 1965, 6 (05) :89-&

[6] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

LEE, CA ;

KLEIMACK, JJ ;

BATDORF, RL ;

WIEGMANN, W ;

LOGAN, RA .

PHYSICAL REVIEW, 1964, 134 (3A) :A761-+

[7] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J].

MISAWA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :137-+

[8]

MISAWA T, PRIVATE COMMUNICATIO

[9] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J].

READ, WT .

BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02) :401-446

[10]

SCHARFETTER DL, 1965, OCT INT EL DEV M WAS

← 1 →