HIGH-PERFORMANCE ION-IMPLANTED LOW-NOISE GAAS-MESFETS

被引：7

|

作者：

FENG, M

EU, VK

KANBER, H

HACKETT, R

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 11期

关键词：

D O I：

10.1109/EDL.1982.25589

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：327 / 329

页数：3

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