HIGH-PERFORMANCE ION-IMPLANTED LOW-NOISE GAAS-MESFETS

被引：7

作者：

FENG, M

EU, VK

KANBER, H

HACKETT, R

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 11期

关键词：

D O I：

10.1109/EDL.1982.25589

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：327 / 329

页数：3

共 9 条

[1] LOW-NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR MADE BY ION-IMPLANTATION [J].

FENG, M ;

EU, VK ;

KANBER, H ;

WATKINS, E ;

SCHELLENBERG, JM ;

YAMASAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :802-804

[2] SILICON IMPLANTED SUPER LOW-NOISE GAAS-MESFET [J].

FENG, M ;

EU, VK ;

SIRACUSA, M ;

WATKINS, E .

ELECTRONICS LETTERS, 1982, 18 (01) :21-23

[3] OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS [J].

FUKUI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1032-1037

[4] LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION [J].

HIGGINS, JA ;

KUVAS, RL ;

EISEN, FH ;

CHEN, DR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :587-596

[5]

HUANG C, 1981, IEEE MTFS INT MICROW, P25

[6]

Kamei K., 1980, International Electron Devices Meeting. Technical Digest, P102

[7] SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE [J].

OHATA, K ;

ITOH, H ;

HASEGAWA, F ;

FUJIKI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1029-1034

[8]

SUZUKI T, 1980, IEEE T MICROW THEORY, P367

[9]

Yamasaki H., 1980, International Electron Devices Meeting. Technical Digest, P106

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