A NEW HYSTERESIS EFFECT IN SILICON P-N-TRANSITIONS

被引：0

|

作者：

ADIROVIC.EI

KNIGIN, PI

KOROLEV, YS

机构：

来源：

DOKLADY AKADEMII NAUK SSSR | 1965年 / 161卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

收藏

页码：70 / &

相关论文

共 50 条

[31] EFFECT OF FIELD DISTRIBUTION OF SILICON P-N-N+ AVALANCHE DIODES ON EFFICIENCY
OKUTO, Y
KONDO, M
MATSUMURA, M
NAGASHIMA, I
JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (02) : 230 - +
[32] PROPERTIES OF P-N TRANSITIONS
VOINOV, VP
PAVLYAK, YS
VOINOVA, LG
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1985, 28 (03): : 90 - 92
[33] NEW EVIDENCE FOR A (P-]D)PI EFFECT AT SILICON
SCHMIDBAUR, H
MALISCH, W
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 1969, 8 (05) : 372 - +
[34] FRANZ-KELDYSH EFFECT IN SILICON P-N JUNCTION
HAMAKAWA, Y
NISHINO, T
YAMAGUCHI, J
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (10) : 1958 - +
[35] FORMING OF R-P TRANSITIONS BY THE SILICON TO SILICON DIRECT BONDING METHOD
VOLLE, VM
VORONKOV, VB
GREKHOV, IV
KOZLOV, VA
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1989, 15 (18): : 59 - 63
[36] Hysteresis, spin transitions, and magnetic ordering in the fractional quantum Hall effect
Cho, H
Kang, W
Campman, KL
Gossard, AC
Bichler, M
Wegscheider, W
PHYSICA E, 2000, 6 (1-4): : 18 - 21
[37] EMITTER DIP EFFECT IN DOUBLE-DIFFUSED N-P-N SILICON TRANSISTORS
MAEDA, M
TANIMOTO, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 16 (01): : 273 - 278
[38] The Impact of Hysteresis on the Electrocaloric Effect at First-Order Phase Transitions
Marathe, Madhura
Ederer, Claude
Grunebohm, Anna
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (02):
[39] Preparation and characterization of nearly hysteresis-free metal-nitride-silicon capacitors on both p- and n-type silicon substrates
1600, (71):
[40] IMPURITIES EFFECT ON HYSTERESIS AT PHASE-TRANSITIONS IN VO2
TSIVTSIVADZE, TA
YURKEVICH, VE
SNEZHKOV, VI
FERROELECTRICS, 1988, 82 : 179 - 184

← 1 2 3 4 5 →