Hot-carrier- induced on-resistance degradation of step gate oxide NLDMOS

被引：2
|
作者：
Han Yan [1 ]
Zhang Bin [1 ]
Ding Koubao [1 ]
Zhang Shifeng [1 ]
Han Chenggong [1 ]
Hu Jiaxian [1 ]
Zhu Dazhong [1 ]
机构：
[1] Zhejiang Univ, Inst Microelect & Photoelect, Hangzhou 310027, Zhejiang, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2010年 / 31卷 / 12期
关键词：
SG-NLDMOS; R-on degradation; charge-pumping; interface state; positive oxide-trapped charge;
D O I：
10.1088/1674-4926/31/12/124006
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The hot-carrier-induced on-resistance degradations of step gate oxide NLDMOS (SG-NLDMOS) transistors are investigated in detail by a DC voltage stress experiment, a TCAD simulation and a charge pumping test. For different stress conditions, degradation behaviors of SG-NLDMOS transistors are analyzed and degradation mechanisms are presented. Then the effect of various doses of n-type drain drift (NDD) region implant on R-on degradation is investigated. Experimental results show that a lower NDD dosage can reduce the hot-carrier induced Ron degradation effectively, which is different from uniform gate oxide NLDMOS (UG-NLDMOS) transistors.
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页数：5
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