Hot-carrier- induced on-resistance degradation of step gate oxide NLDMOS

被引：2

作者：

Han Yan ^{[1
]}

Zhang Bin ^{[1
]}

Ding Koubao ^{[1
]}

Zhang Shifeng ^{[1
]}

Han Chenggong ^{[1
]}

Hu Jiaxian ^{[1
]}

Zhu Dazhong ^{[1
]}

机构：

[1] Zhejiang Univ, Inst Microelect & Photoelect, Hangzhou 310027, Zhejiang, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2010年 / 31卷 / 12期

关键词：

SG-NLDMOS; R-on degradation; charge-pumping; interface state; positive oxide-trapped charge;

D O I：

10.1088/1674-4926/31/12/124006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The hot-carrier-induced on-resistance degradations of step gate oxide NLDMOS (SG-NLDMOS) transistors are investigated in detail by a DC voltage stress experiment, a TCAD simulation and a charge pumping test. For different stress conditions, degradation behaviors of SG-NLDMOS transistors are analyzed and degradation mechanisms are presented. Then the effect of various doses of n-type drain drift (NDD) region implant on R-on degradation is investigated. Experimental results show that a lower NDD dosage can reduce the hot-carrier induced Ron degradation effectively, which is different from uniform gate oxide NLDMOS (UG-NLDMOS) transistors.

引用

页数：5

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