DISLOCATION GENERATION IN THE INITIATION OF FRACTURES IN SILICON-CRYSTALS

被引：8

作者：

NISHINO, Y ^{[1
]}

IMURA, T ^{[1
]}

机构：

[1] NAGOYA UNIV,FAC ENGN,DEPT MET,NAGOYA,AICHI 464,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 09期

关键词：

D O I：

10.1143/JJAP.21.1283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1283 / 1286

页数：4

共 50 条

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