DIELECTRIC INSTABILITY AND BREAKDOWN IN WIDE BANDGAP INSULATORS

被引：48

作者：

DISTEFANO, TH

SHATZKES, M

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 01期

关键词：

D O I：

10.1116/1.568797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：37 / 46

页数：10

共 31 条

[11]

Frohlich H., 1939, REP PROG PHYS, V6, P411, DOI [10.1088/0034-4885/6/1/326, DOI 10.1088/0034-4885/6/1/326]

[12] BREAKDOWN CHARACTERISTICS IN THIN SIO2 FILM [J].

HAMANO, K .

[13]

HIPPEL AV, 1938, PHYS REV, V54, P1096

[14] THEORY OF LOCALIZED ELECTRONIC BREAKDOWN IN INSULATING FILMS [J].

KLEIN, N .

[15] ELECTRICAL BREAKDOWN IN THIN DIELECTRIC FILMS [J].

KLEIN, N .

[16]

KLEIN N, 1974, PRIVATE COMMUNICATIO

[17]

KLEIN N, 1969, ADVAN ELECTRON ELECT, V26, P309

[18] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

[19]

LIGENZA JR, 1970, 138 M EL SOC ATL CIT

LYNCH, WT .