DIELECTRIC INSTABILITY AND BREAKDOWN IN WIDE BANDGAP INSULATORS

被引：48
作者：
DISTEFANO, TH
SHATZKES, M
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 01期
关键词：
D O I：
10.1116/1.568797
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：37 / 46
页数：10
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