ELECTRON-BEAM CELL-PROJECTION LITHOGRAPHY SYSTEM

被引：55

作者：

SAKITANI, Y ^{[1
]}

YODA, H ^{[1
]}

TODOKORO, H ^{[1
]}

SHIBATA, Y ^{[1
]}

YAMAZAKI, T ^{[1
]}

OHBITU, K ^{[1
]}

SAITOU, N ^{[1
]}

MORIYAMA, S ^{[1
]}

OKAZAKI, S ^{[1
]}

MATUOKA, G ^{[1
]}

MURAI, F ^{[1
]}

OKUMURA, M ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.585997

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electron-beam exposure system HL-800D has been developed for the mass production of both quarter micron large-scale integrated memories and application specific integrated circuits (ASICs). To achieve a productive level of throughput, the system utilizes a cell-projection method combined with variable shaped method and a continuously moving stage at variable speed depending on the pattern density. The system is operated at a 50 kV acceleration voltage and a 1 muC/cm2 dosage. Three stage deflectors have been developed to assure high-speed deflection and highly accurate positioning. A fast pattern controller generates patern data at 200 ns shot-cycle-time with the positioning error correction and proximity effect correction. A high-speed ceramic XY stage and an automatic wafer loder have been developed. The system is operated by a workstation which also provides data conversion. The estimated throughput of the system is 11 wafers/h for 0.3 mum ASICs and 20 wafers/h for quarter micron memories.

引用

页码：2759 / 2763

页数：5

共 7 条

[1] CELL PROJECTION COLUMN FOR HIGH-SPEED ELECTRON-BEAM LITHOGRAPHY SYSTEM [J].