VISUALIZATION OF INHOMOGENEITIES OF CRYSTAL-GROWTH BY OPTICAL OBSERVATIONS

被引:0
作者
DONECKER, J
机构
来源
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES | 1994年 / 135期
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Optical diffraction is used to map the distances of striations over macroscopic regions. The diffraction is due to striation-induced changes in transmission, refractive indices or surface shape after etching. In different modes of the experiment one obtains a survey of the dominant striation distances, areas of stationary growth, areas of striations with a certain distance and the distribution of distances. Examples for mixed oxide crystals and InP as well as requirements and limitations are discussed.
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页码:311 / 314
页数:4
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