EFFECTS OF NONLINEAR GAIN ON SINGLE LONGITUDINAL MODE BEHAVIOR OF SEMICONDUCTOR-LASERS

被引：0

作者：

GUO, CZ ^{[1
]}

XIE, JS ^{[1
]}

SHEN, F ^{[1
]}

机构：

[1] WUHAN RES INST POSTS & TELECOMMUN,WUHAN,PEOPLES R CHINA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 07期

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D O I：

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中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：794 / 803

页数：10

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[11] SPECTRAL HOLE-BURNING AND NONLINEAR-GAIN DECREASE IN A BAND-TO-LEVEL TRANSITION SEMICONDUCTOR LASER
NISHIMURA, Y
NISHIMUR.Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (10) : 1011 - 1019
[12] CALCULATED SPONTANEOUS EMISSION FACTOR FOR DOUBLE-HETEROSTRUCTURE INJECTION-LASERS WITH GAIN-INDUCED WAVEGUIDING
PETERMANN, K
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) : 566 - 570
[13] EFFECT OF WAVEGUIDING PROPERTIES ON THE AXIAL MODE COMPETITION IN STRIPE-GEOMETRY SEMICONDUCTOR-LASERS
SEKI, K
KAMIYA, T
YANAI, H
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 706 - 713
[14] DEPENDENCE OF LONGITUDINAL MODE STRUCTURE ON INJECTED CARRIER DIFFUSION IN DIODE-LASERS
STREIFER, W
BURNHAM, RD
SCIFRES, DR
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (06) : 403 - 404
[15] WANG S, 1981, IEEE J QUANTUM ELECT, V17, P435
[16] ANALYSIS OF GAIN SUPPRESSION IN UNDOPED INJECTION-LASERS
YAMADA, M
SUEMATSU, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2653 - 2664
[17] CONDITION OF SINGLE LONGITUDINAL MODE-OPERATION IN INJECTION-LASERS WITH INDEX-GUIDING STRUCTURE
YAMADA, M
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 743 - 749
[18] BROADENING MECHANISM IN SEMICONDUCTOR (GAAS) LASERS - LIMITATIONS TO SINGLE-MODE POWER EMISSION
ZEE, B
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (10) : 727 - 736