GROWTH-CHARACTERISTICS OF OXIDE PRECIPITATES IN HEAVILY DOPED SILICON-CRYSTALS

被引：21

作者：

MATSUMOTO, S ^{[1
]}

ISHIHARA, I ^{[1
]}

KANEKO, H ^{[1
]}

HARADA, H ^{[1
]}

ABE, T ^{[1
]}

机构：

[1] SHIN ETSU HANDOTAI CO, ANNAKA, GUNMA 37901, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 10期

关键词：

D O I：

10.1063/1.95780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：957 / 959

页数：3

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