LOW-TEMPERATURE DRY ETCHING

Low-temperature electron-cyclotron-resonance microwave plasma etching and reactive ion etching are described for ULSI device fabrication. Highly selective anisotropic etching at a high rate, which implies dry etching without tradeoffs is performed without changing the discharge parameters. This etching is only achieved at reduced wafer temperatures. The etching mechanism and the model are discussed based on the etching yield results obtained by the mass-selected reactive ion beam etching experiments. The new etching system and the etching properties obtained for the low-temperature etching are reviewed comparing those obtained in the conventional reactive ion etching and electron-cyclotron-resonance microwave plasma etching.