PROBLEM OF A CHANGE IN THE DEGREE OF COMPENSATION OF SHALLOW IMPURITIES AS A RESULT OF ISOVALENT DOPING OF GALLIUM-ARSENIDE

被引：0

作者：

BIRYULIN, YF

GANINA, NV

CHALDYSHEV, VV

SHMARTSEV, YV

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1985年 / 19卷 / 06期

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D O I：

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：677 / 679

页数：3

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